Elettrolinux

The BSIM Research Group in the Department of Electrical Engineering and Computer Sciences (EECS) at the University of California, Berkeley has developed BSIM (Berkeley Short-channel IGFET Model); it's a physics-based, accurate, scalable, robustic and predictive MOSFET SPICE model for circuit simulation and CMOS technology development. The third iteration of BSIM3 (commonly abbreviated as BSIM3v3), has since been widely used by most semiconductor and IC design companies world-wide for device modeling and CMOS IC design. All suggestions for model improvements are charted by the Compact Model Council (CMC). It is a consortium of semiconductor companies and simulator vendors world-wide promoting BSIM3v3 development as the industry standard compact model. The council is affliliated with Electronic Industries Alliance (EIA). In parallel, the BSIM research team has developed a compact model for SOI MOSFETs (BSIMSOI) which addresses several new issues in modeling sub-0.13 micron CMOS/SOI high-speed and RF circuit simulation. As extension of BSIM3, now there is BSIM4 which addresses the MOSFET physical effects into sub-100nm regime. Terms of license are BSD license.